2SK3652
2SK3652 is N-channel enhancement mode MOSFET manufactured by Panasonic.
Features
- Low on-resistance, low Qg
- High avalanche resistance
- Applications
- For PDP
- For high-speed switching
- Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability
- VDSS VGSS
ID IDP EAS
230 ±30 50 200 2 200
V V A A m J
Power dissipation
Junction temperature Storage temperature
Ta = 25°C
Tj Tstg
100 3
- 55 to +150
°C °C
Note)
- : L = 1 m H, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C
18.6±0.5stage.dc (2.0) Solder Dip
26.5±0.5e/
(2.0) (1.2) (10.0) (4.5) (23.4)
22.0±0.5
15.5±0.5 φ 3.2±0.1
Unit: mm 3.0±0.3 5˚
5˚
(4.0) 2.0±0.2
5˚
5˚ 5˚
1.1±0.1
0.7±0.1
5.45±0.3...
