Datasheet Summary
High Frequency FETs
Silicon N-Channel 4-pin MOS FET
For VHF amplification unit: mm
- 0.3
+0.2 +0.2
M Di ain sc te on na tin nc ue e/ d s Features
0.65±0.15 2.9±0.2 1.9±0.2
- 0.3
0.65±0.15
- 0.1
+0.2
Parameter
Symbol
Ratings 15
Unit V V V
Drain to Source voltage
Gate 2 to Source voltage Drain current
VG2S ID PD
±8
±30 200 150 mA
Allowable power dissipation Channel temperature Storage temperature mW °C °C
1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin)
Tch
Tstg
- 55 to +150
Marking Symbol: CX s Electrical Characteristics (Ta = 25°C)
Parameter Symbol Drain current IDS
Conditions min 6 typ
0 to 0.1
Gate 1 to Source...