3SK227 Datasheet Silicon N-channel 4-pin MOSFET

Manufacturer: Panasonic

Overview: High Frequency FETs 3SK227 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm 2.8 –0.3 +0.2 +0.

Datasheet Details

0.65±0.15 2.9±0.2 1.9±0.2 1.5.
0.3 0.65±0.15 1.1.
0.1 +0.2 Parameter Symbol Ratings 15 Unit V V V Drain to Source voltage VDS Gate 2 to Source voltage Drain current VG2S ID PD ±8 ±30 200 150 mA Allowable power dissipation Channel temperature Storage temperature mW °C °C 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) Tch Tstg.
55 to +150 Marking Symbol: CX s Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain current IDS Co.