• Part: 3SK225
  • Description: Silicon N Channel Dual Gate MOS Type FET
  • Manufacturer: Toshiba
  • Size: 175.25 KB
Download 3SK225 Datasheet PDF
Toshiba
3SK225
3SK225 is Silicon N Channel Dual Gate MOS Type FET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Unit: mm - Superior cross modulation performance. - Low noise figure: NF = 2.0dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VG1S VG2S ID PD Tch Tstg Rating 13.5 ±8 ±8 30 150 125 -55~125 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3J1A Weight: 0.013 g (typ.) Characteristics Gate 1...