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3SK223 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

Key Features

  • The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR =.
  • 30 dB.
  • Low Noise Figure:.
  • High Power Gain:.
  • Enhancement Type. 2.9±0.2 (1.8).

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Part Number Description
3SK222 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB • Low Noise Figure: • High Power Gain: • Enhancement Type. 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 –0.3 +0.2 +0.2 +0.2 0.4 –0.3 NF2 = 0.9 dB TYP. (f = 55 MHz) GPS = 20 dB TYP. (f = 470 MHz) 0.85 0.95 1.5 –0.3 2 3 0.4 –0.3 0.4 –0.3 0.16 +0.2 –0.3 +0.2 NF1 = 2.2 dB TYP. (f = 470 MHz) • Suitable for use as RF amplifier in CATV tuner. • Automatically Mounting: • Small Package: Embossed Type Taping 4 Pins Mini Mold 1 +0.