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3SK224 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

Key Features

  • Low Noise Figure:.
  • High Power Gain:.
  • Automatically Mounting:.
  • Small Package: NF = 1.8 dB TYP. (f = 900 MHz) GPS = 17 dB TYP. (f = 900 MHz).

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Part Number Description
3SK222 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
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Full PDF Text Transcription (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure: • High Power Gain: • Automatically Mounting: • Small Package: NF = 1.8 dB TYP. (f = 900 MHz) GPS = 17 dB TYP. (f = 900 MHz) PACKAGE DIMENSIONS (Unit: mm) 0.4–0.05 0.4–0.05 0.4–0.05 0.16–0.06 +0.1 +0.1 Embossed Type Taping 4 Pins Mini Mold 2.9±0.2 (1.8) 0.85 0.95 2 3 4 5° +0.1 • Suitable for use as RF amplifier in UHF TV tuner. 2.8–0.1 +0.2 1.5–0.1 +0.