3SK222
Overview
- The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = -30 dB
| Part | 3SK222 |
|---|---|
| Description | N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR |
| Category | Transistor |
| Manufacturer | NEC |
| Size | 58.20 KB |
Datasheets by Manufacturer
- 3SK225 — Toshiba — Silicon N Channel Dual Gate MOS Type FET