• Part: 3SK222
  • Description: N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
  • Manufacturer: NEC
  • Size: 58.20 KB
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Datasheet Summary

DATA SHEET MOS FIELD EFFECT TRANSISTOR RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD Features - The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = - 30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 - 0.05 1.5 +0.2 - 0.1 2.8 +0.2 - 0.3 - Low Noise Figure: - High Power Gain: - Enhancement Type. NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz) GPS = 23 dB TYP. (f = 200 MHz) (1.8) 0.85 0.95 2.9±0.2 - Automatically Mounting: - Small Package: Embossed Type Taping 4 Pins Mini Mold 5° 5° Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to...