Datasheet4U Logo Datasheet4U.com

3SK222 - N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

Key Features

  • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR =.
  • 30 dB.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
3SK22 Silicon N-Channel Transistor Toshiba
3SK225 Silicon N Channel Dual Gate MOS Type FET Toshiba Semiconductor
3SK226 Silicon N Channel Dual Gate MOS Type FET Toshiba Semiconductor
3SK227 Silicon N-Channel 4-pin MOSFET Panasonic
3SK228 Silicon NPN Triple Diffused Hitachi Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
3SK223 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
3SK224 N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
3SK231 MOSFET
3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • The Characteristic of Cross-Modulation is good. CM = 92 dBµ TYP. @ f = 200 MHz, GR = –30 dB PACKAGE DIMENSIONS (Unit: mm) 0.4 +0.1 –0.05 1.5 +0.2 –0.1 2.8 +0.2 –0.3 • Low Noise Figure: • High Power Gain: • Enhancement Type. NF1 = 1.2 dB TYP. (f = 200 MHz) NF2 = 1.0 dB TYP. (f = 55 MHz) GPS = 23 dB TYP. (f = 200 MHz) (1.8) 0.85 0.95 2.9±0.