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3SK22 - Silicon N-Channel Transistor

Key Features

  • High Power Gain : Gps =20dB (Typ. ) (f=100MHz).
  • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz).
  • High Forward Transfer Admittance : |y fs | = 7ms (Typ. ) (f=lkHz).
  • High Input Impedance : Riss = 12kfi (Typ. ) (f=100MHz).
  • Low Reverse Transfer Capacitance : Crss =0 - 6 P F (Max. ) Unit in 05.8UAX.

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Datasheet Details

Part number 3SK22
Manufacturer Toshiba
File Size 54.31 KB
Description Silicon N-Channel Transistor
Datasheet download datasheet 3SK22 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL JUNCTION TYPE 3SK22 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. FEATURES • High Power Gain : Gps =20dB (Typ. ) (f=100MHz) • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz) • High Forward Transfer Admittance : |y fs | = 7ms (Typ.) (f=lkHz) • High Input Impedance : Riss = 12kfi (Typ.) (f=100MHz) • Low Reverse Transfer Capacitance : Crss =0 - 6 P F (Max.) Unit in 05.8UAX. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL ^CIDO, lGl,lG2 Pd stg RATING -18 10 200 150 -65^150 UNIT mA mW TOSHIBA Weight : _L DRAIN 2. SOURCE a GATE 1 4, GATE 2 (CASE) — 72 —7 , TB — 9C 2 -5C1C 0.