• Part: 3SK28
  • Description: Silicon N-Channel Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 256.58 KB
Download 3SK28 Datasheet PDF
Toshiba
3SK28
FEATURES - High Gain : |y f =4. 5<L3m S | - High Power Gain : Gps =17d B (Min.) at f=100MHz - Low Reverse Transfer Capacitance : Cr ss=0.6p F (Max.) - Low Noise : NF=2.5d B (Max.) at f=100MHz NF=3.0d B (Max.) at f=30Hz 05.8MAX Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate.l-Drain Voltage Gate.2-Drain Voltage Gate.l Current Gate. 2 Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL V C1DS V G2DS IG] - G2 T stg RATING -18 -18 10 10 200 150 -65VL50 UNIT m A m A m W 1. DRAIN 2. SOURCE 3. QATE 1 4. GATE 2 (CASE) TO 72 - 5C 1 C Weight : 0.35g ELECTRICAL CHARACTERISTICS CHARACTERISTIC Gate Leakage Current Gate.l-Drain Breakdown Voltage Gate. 2-Drain Breakdown Voltage Drain Current Gate.l-Source Cut-off Voltage (Ta=25°c) SYMBOL TEST CONDITION MIN. TYP. MAX. IGSS VG1S=-15V, Vci S =0,VDS=0 -10 V (BR)G1DS Id =-100y A, IG2=0, VDS =0 (Note 2) -18 IG2 =-100y A,...