Datasheet Summary
High Frequency FETs
3SK285
3SK302(Tentative), 3SK306(Tentative)
Silicon N-Channel MOS
For UHF amplification s Features q Though low voltage operation, performance is equivalent to the conventional product. q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available.
0.65±0.15
+0.2
- 0.3
+0.2
- 0.3
Unit : mm
0.65±0.15
0.5R 41
2.9±0.2 1.9±0.2 0.95 0.95
+0.1
- 0.05
0 to 0.1
+0.1
- 0.06
+0.2
- 0.1 0.8 s...