Datasheet4U Logo Datasheet4U.com

3SK306 - Silicon N-Channel MOS

Download the 3SK306 datasheet PDF. This datasheet also covers the 3SK302 variant, as both devices belong to the same silicon n-channel mos family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • q Though low voltage operation, performance is equivalent to the conventional product. q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available. 3SK302 0.65±0.15 +0.2 2.8.
  • 0.3 +0.2 1.5.
  • 0.3 Unit : mm 0.65±0.15 0.5R 41 2.9±0.2 1.9±0.2 0.95 0.95 32 +0.1 0.4.
  • 0.05 0 to 0.1 +0.1 0.16.
  • 0.06 +0.2 1.1.
  • 0.1 0.8 s Absolute Maximum Ratings (Ta = 25˚C) Parameter Drain-Source voltage Gate 1-Source.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (3SK302-Panasonic.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3SK306
Manufacturer Panasonic
File Size 24.66 KB
Description Silicon N-Channel MOS
Datasheet download datasheet 3SK306 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Features q Though low voltage operation, performance is equivalent to the conventional product. q Downsizing of sets by mini or S-mini type package, and automatic insertion by taping/magazine packing are available. 3SK302 0.65±0.15 +0.2 2.8 –0.3 +0.2 1.5 –0.3 Unit : mm 0.65±0.15 0.5R 41 2.9±0.2 1.9±0.2 0.95 0.95 32 +0.1 0.4 –0.05 0 to 0.1 +0.1 0.16 –0.06 +0.2 1.1 –0.1 0.