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AQW216EH - Photo MOS Relay

Download the AQW216EH datasheet PDF. This datasheet also covers the AQW212EH variant, as both devices belong to the same photo mos relay family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and high speed response Can control max. 0.14 A load current with 5 mA input curr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AQW212EH-Panasonic.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AQW210 High Voltage Photo MOS Relays Global Components
AQW210A High Voltage Photo MOS Relays Global Components
AQW210S HIGH VOLTAGE/ PHOTO MOS RELAY Etc
AQW210T2S (AQW210TS / AQW210T2S) Photo MOS Relays NAIS
AQW210TS HIGH VOLTAGE/ PHOTO MOS RELAY Etc

Other Datasheets by Panasonic

Part Number Description
AQW216 Photo MOS Relay
AQW216A Photo MOS Relay
AQW210 Photo MOS Relay
AQW210A Photo MOS Relay
AQW210EH Photo MOS Relay

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DIP8-pin type with reinforced insulation GE 2 Form A (AQW21❍EH) 9.86 .388 6.4 .252 9.86 .388 3.2 .126 6.4 .252 2.9 .114 (Height includes standoff) mm inch 18 27 36 45 RoHS compliant FEATURES 1. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Con-forms to EN41003, EN60950 (reinforced insulation). 2. Applicable for 2 Form A use as well as two independent 1 Form A use 3. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 4. High sensitivity and high speed response Can control max. 0.14 A load current with 5 mA input current. Fast operation speed of Typ. 0.5 ms (AQW210EH). 5. Low-level off state leakage current of max.
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