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AQW654 - Photo MOS Relay

Features

  • 1. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity and low onresistance Can control max. 0.16 A load current with 5 mA input current. Low on-resistance of max. 11 Ω. (in case of using only 1 channel) 4. Low-level off state leakage current of max. 1 μA.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Both 1 Form A and 1 Form B contacts incorporated in a compact DIP8-pin HE 1 Form A & 1 Form B with low on-resistance (AQW654) 9.78 .385 6.4 .252 3.9 9.78 .385 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 1 N.C. 2 3 4 N.O. 8 7 6 5 RoHS compliant FEATURES 1. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity and low onresistance Can control max. 0.16 A load current with 5 mA input current. Low on-resistance of max. 11 Ω. (in case of using only 1 channel) 4. Low-level off state leakage current of max.
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