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AQW654A - Photo MOS Relay

Download the AQW654A datasheet PDF. This datasheet also covers the AQW654 variant, as both devices belong to the same photo mos relay family and are provided as variant models within a single manufacturer datasheet.

Features

  • 1. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity and low onresistance Can control max. 0.16 A load current with 5 mA input current. Low on-resistance of max. 11 Ω. (in case of using only 1 channel) 4. Low-level off state leakage current of max. 1 μA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AQW654-Panasonic.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Both 1 Form A and 1 Form B contacts incorporated in a compact DIP8-pin HE 1 Form A & 1 Form B with low on-resistance (AQW654) 9.78 .385 6.4 .252 3.9 9.78 .385 .154 6.4 .252 3.6 .142 (Height includes standoff) mm inch 1 N.C. 2 3 4 N.O. 8 7 6 5 RoHS compliant FEATURES 1. Applicable for 1 Form A and 1 Form B use as well as two independent 1 Form A and 1 Form B use 2. Controls low-level analog signals PhotoMOS feature extremely low closedcircuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity and low onresistance Can control max. 0.16 A load current with 5 mA input current. Low on-resistance of max. 11 Ω. (in case of using only 1 channel) 4. Low-level off state leakage current of max.
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