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AQY414EH - Photo MOS Relay

Download the AQY414EH datasheet PDF. This datasheet also covers the AQY412EH variant, as both devices belong to the same photo mos relay family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. 1 Form B output type 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N.
  • N+ Drain electrode 3. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between i.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AQY412EH-Panasonic.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AQY414S HIGH VOLTAGE/ PHOTO MOS RELAY Etc
AQY410EH GU (General Use)-E Type 1-Channel (Form B) 4-pin Type Nais
AQY410SX GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type Nais
AQY410SZ GU (General Use) Type SOP Series 1- Channel (Form B) 4-Pin Type Nais
AQY210HL PhotoMOS RELAY NAIS

Other Datasheets by Panasonic

Part Number Description
AQY414S Photo MOS Relay
AQY410EH Photo MOS Relay
AQY410S Photo MOS Relay
AQY412EH Photo MOS Relay
AQY412S Photo MOS Relay

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Normally closed type with reinforced insulation (AQY410EH, 414EH) (AQY412EH) GE 1 Form B (AQY41❍EH) 4.78 .188 6.4 .252 3.2 .126 4.78 .188 (Height includes standoff) 6.4 .252 2.9 .114 mm inch 14 23 RoHS compliant FEATURES 1. 1 Form B output type 2. Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Cross section of the normally-closed type of power MOS Passivation membrane Source electrode Gate electrode Intermediate insulating membrane N+ P+ N+ N+ P+ N+ Gate oxidation membrane N– N+ Drain electrode 3. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 4.