B943
Key Features
- 5±0.2
- 7±0.3 φ3.1±0.1
- 4±0.1
- 3±0.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
- 0±0.5
- 8±0.1
- 5 -0.1 +0.2
- 54±0.25 5.08±0.5 13 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
- h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -100V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = - 0.5A IC = -2A, IB = - 0.1A IC = -2A, IB = - 0.1A VCE = -10V, IC = - 0.5A, f = 10MHz IC = - 0.5A, IB1 = -50mA, IB2 = 50mA 30 0.3 1.1 0.3 -80 45 90 260 - 0.5 -1.5 V V MHz µs µs µs min typ max -10 -50 Unit µA µA V FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC - Ta
