Excellent collector current IC characteristics of forward current
3.05±0.1
transfer ratio hFE.
High transition frequency fT.
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9±0.1 16.0±1.0
/.
Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
120
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
120
V
le st.
Power Transistors
2SC2590
Silicon NPN epitaxial planar type
For low-frequency power amplification
8.0+–00..15
Unit: mm
3.2±0.2
■ Features
φ 3.16±0.1
3.8±0.3 11.0±0.5
• Excellent collector current IC characteristics of forward current
3.05±0.1
transfer ratio hFE
• High transition frequency fT • TO-126B package which requires no insulation plate for installa-
tion to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e Parameter
Symbol Rating
Unit
c type) Collector-base voltage (Emitter open) VCBO
120
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
120
V
le sta ntinu Emitter-base voltage (Collector open) VEBO
5
V
a e cyc isco Collector current
IC
0.5
A
life d, d Peak collector current
ICP
1.