Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances and high efficiency with a lowvoltage power supply.
Absolute Maximum Ratings Ta = 25°C
1.9±0.1 16.0±1.0
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
40
V
c type Collector-emitter voltage (Base open) VCEO
20
V
n d tage. ued Emitter-base voltage (Collector open) VEBO
7
V
le s ntin Collector current
IC
5
A
a e cyc isco Peak colle.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
C2594. For precise diagrams, and layout, please refer to the original PDF.
Power Transistors 2SC2594 Silicon NPN epitaxial planar type For low-frequency power amplification/ stroboscope/converter 120° 7.5+–00..15 Unit: mm 2.9±0.2 2.3±0.2 3.8±0.3...
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troboscope/converter 120° 7.5+–00..15 Unit: mm 2.9±0.2 2.3±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances and high efficiency with a lowvoltage power supply ■ Absolute Maximum Ratings Ta = 25°C 1.9±0.1 16.0±1.0 / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 40 V c type Collector-emitter voltage (Base open) VCEO 20 V n d tage.
C2594 Datasheet
