C3130
C3130 is Silicon NPN Transistor manufactured by Panasonic.
Features
- High transition frequency f T
- Small collector output capacitance (mon base, input open cir-
0.40+- 00..0150 3
0.16+- 00..0160
0.4±0.2
1.50- +00..0255 2.8- +00..32 cuited) Cob and reverse transfer capacitance (mon emitter) Crb
- Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine packing
(0.95) (0.95)
1.9±0.1 2.90+- 00..0250
5˚
(0.65)
/
- Absolute Maximum Ratings Ta = 25°C
10˚ e e) Parameter
Symbol Rating
Unit c e. d typ Collector-base voltage (Emitter open) VCBO
V n d stag tinue Collector-emitter voltage (Base open) VCEO
0 to 0.1 1.1- +00..12 1.1- +00..13
V a e cle con Emitter-base voltage (Collector open) VEBO
V lifecy , dis Collector current
50 m A n u ct ped Collector power dissipation
150 m W te tin Produ ed ty Junction temperature
Tj
°C ur tinu Storage temperature
Tstg
- 55 to +150 °C
Marking Symbol: 1S
1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n followingefdodiscon
- Electrical Characteristics Ta = 25°C ± 3°C des , plan Parameter
Symbol
Conditions...