• Part: C3130
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Panasonic
  • Size: 217.43 KB
Download C3130 Datasheet PDF
Panasonic
C3130
C3130 is Silicon NPN Transistor manufactured by Panasonic.
Features - High transition frequency f T - Small collector output capacitance (mon base, input open cir- 0.40+- 00..0150 3 0.16+- 00..0160 0.4±0.2 1.50- +00..0255 2.8- +00..32 cuited) Cob and reverse transfer capacitance (mon emitter) Crb - Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.9±0.1 2.90+- 00..0250 5˚ (0.65) / - Absolute Maximum Ratings Ta = 25°C 10˚ e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage (Emitter open) VCBO V n d stag tinue Collector-emitter voltage (Base open) VCEO 0 to 0.1 1.1- +00..12 1.1- +00..13 V a e cle con Emitter-base voltage (Collector open) VEBO V lifecy , dis Collector current 50 m A n u ct ped Collector power dissipation 150 m W te tin Produ ed ty Junction temperature Tj °C ur tinu Storage temperature Tstg - 55 to +150 °C Marking Symbol: 1S 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n followingefdodiscon - Electrical Characteristics Ta = 25°C ± 3°C des , plan Parameter Symbol Conditions...