C3187
C3187 is Silicon NPN Transistor manufactured by Panasonic.
Features
5.1±0.2
- High collector-emitter voltage (Base open) VCEO
- Small collector output capacitance (mon base, input open cir- cuited) Cob
0.7±0.1
- Absolute Maximum Ratings Ta = 25°C
0.7±0.2 12.9±0.5
/ Parameter
Symbol Rating
Unit e Collector-base voltage (Emitter open) VCBO
V pe) Collector-emitter voltage (Base open) VCEO
V nc d ge. ed ty Emitter-base voltage (Collector open) VEBO
2.3±0.2
V sta tinu Collector current
100 m A a e cycle iscon Peak collector current
200 m A life d, d Collector power dissipation
750 m W n u duct type Junction temperature
Tj
°C te tin Pro ed Storage temperature
Tstg
- 55 to +150 °C
0.45+- 00..115 2.5+- 00..26
2.5+- 00..26
0.45+- 00..115
1 23
1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package in n s followlianngefdoudriscontinu
- Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
V tinue anc Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB =...
