C3507 Description
Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0±0.3 5.0±0.2 (0.7).
C3507 Key Features
- High-speed switching
- High collector-base voltage (Emitter open) VCBO
- Satisfactory linearity of forward current transfer ratio hFE
- Full-pack package which can be installed to the heat sink with one