High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1.
Satisfactory linearity of forward current transfer ratio hFE.
Full-pack package which can be installed to the heat sink with one
screw
2.0±0.2
2.0±0.1.
Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.6±0.2
/ Parameter
Symbol Rating
Unit
16.2±0.5 (3.5)
Solder Dip
e ) Collector-base voltage (Emitter open) VCBO
1 000
V
c type Co.
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Power Transistors
2SC3507
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
15.0±0.3
5.0±0.2
(0.7)
■ Features
11.0±0.2
(3.2)
• High-speed switching
21.0±0.5 15.0±0.2
• High collector-base voltage (Emitter open) VCBO
φ 3.2±0.1
• Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one
screw
2.0±0.2
2.0±0.1
■ Absolute Maximum Ratings TC = 25°C
1.1±0.1
0.6±0.2
/ Parameter
Symbol Rating
Unit
16.2±0.5 (3.5)
Solder Dip
e ) Collector-base voltage (Emitter open) VCBO
1 000
V
c type Collector-emitter voltage (E-B short) VCES
1 000
V
n d tage.
C3507 Datasheet
