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C5406 - Silicon NPN triple diffusion mesa type Power Transistors

Key Features

  • q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 14 8 100 3 Junction temperature Storage te.

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Datasheet Details

Part number C5406
Manufacturer Panasonic
File Size 34.82 KB
Description Silicon NPN triple diffusion mesa type Power Transistors
Datasheet download datasheet C5406 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 14 8 100 3 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A A W ˚C ˚C 3.3±0.3 0.7±0.1 4.5 15.5±0.5 φ3.2±0.1 3.0±0.3 5° 5° 23.4 22.0±0.5 2.0 1.2 10.0 26.5±0.5 4.0 2.0±0.