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C5406A - Silicon NPN triple diffusion mesa type Power Transistors

This page provides the datasheet information for the C5406A, a member of the C5406 Silicon NPN triple diffusion mesa type Power Transistors family.

Datasheet Summary

Features

  • q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 14 8 100 3 Junction temperature Storage te.

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Datasheet preview – C5406A

Datasheet Details

Part number C5406A
Manufacturer Panasonic
File Size 34.82 KB
Description Silicon NPN triple diffusion mesa type Power Transistors
Datasheet download datasheet C5406A Datasheet
Additional preview pages of the C5406A datasheet.

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Full PDF Text Transcription

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Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 14 8 100 3 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A A W ˚C ˚C 3.3±0.3 0.7±0.1 4.5 15.5±0.5 φ3.2±0.1 3.0±0.3 5° 5° 23.4 22.0±0.5 2.0 1.2 10.0 26.5±0.5 4.0 2.0±0.
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