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C5406A - Silicon NPN triple diffusion mesa type Power Transistors

Download the C5406A datasheet PDF. This datasheet also covers the C5406 variant, as both devices belong to the same silicon npn triple diffusion mesa type power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 14 8 100 3 Junction temperature Storage te.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (C5406-Panasonic.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number C5406A
Manufacturer Panasonic
File Size 34.82 KB
Description Silicon NPN triple diffusion mesa type Power Transistors
Datasheet download datasheet C5406A Datasheet

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Other Datasheets by Panasonic

Part Number Description
C5406 Silicon NPN triple diffusion mesa type Power Transistors
C5407 2SC5407
C5413 Power Transistors
C5419 Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm s Features q High breakdown voltage, and high reliability through the use of a glass passivation layer q High-speed switching q Wide area of safe operation (ASO) s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C VCBO VCES VCEO VEBO ICP IC IB PC 1500 1500 600 5 20 14 8 100 3 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V V A A A W ˚C ˚C 3.3±0.3 0.7±0.1 4.5 15.5±0.5 φ3.2±0.1 3.0±0.3 5° 5° 23.4 22.0±0.5 2.0 1.2 10.0 26.5±0.5 4.0 2.0±0.