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D2209 - 2SD2209

Key Features

  • 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4 1 3 Ratings Unit V V V A A 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 0 to 0.15 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature PC Tj Tstg s Electrical Characteristics (TC=25˚C) Parameter Symbol.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington 7.0±0.3 3.5±0.2 Unit: mm For power amplification and switching 7.2±0.3 0.8±0.2 3.0±0.2 1.0±0.2 M Di ain sc te on na tin nc ue e/ d q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. +0.3 s Features 1.1±0.1 0.75±0.1 0.85±0.1 0.4±0.1 2.3±0.2 4.6±0.4 2 s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC 100±15 100±15 5 8 4 1 3 Ratings Unit V V V A A 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 0 to 0.