D2206
Key Features
- High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
- Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
- Part: D2206
- Description: 2SD2206
- Manufacturer: Toshiba
- Size: 131.45 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| D2201 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| D2209 | Panasonic | 2SD2209 |
| D2201N | Infineon | Crow Bar Diode |
| D2202UK | Seme LAB | METAL GATE RF SILICON FET |
| D2209 | TRANSMETRA | Torque Sensor |
| D2200 | SANYO | PNP/NPN Epitaxial Planar Silicon Transistors |
| D2202 | SANYO | 2SD2202 |
| D2200N | Infineon | Rectifier Diode |
| D2204UK | Seme LAB | METAL GATE RF SILICON FET |
| D2203UK | Seme LAB | METAL GATE RF SILICON FET |