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FC694301 - Silicon N-channel MOS FET

Features

  • s.
  • High-speed switching.
  • Low drain-source ON resistance: RDS(on) typ. = 3 W (VGS = 2.5 V).
  • Small size surface mounting package: SSMini6-F3-B.
  • Eco-friendly Halogen-free package.
  • Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Drain-source surrender voltage VDSS FET1 Gate-source surrender voltage FET2 Drain current VGSS ID Peak drain current IDP Total power.

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Datasheet preview – FC694301

Datasheet Details

Part number FC694301
Manufacturer Panasonic
File Size 492.44 KB
Description Silicon N-channel MOS FET
Datasheet download datasheet FC694301 Datasheet
Additional preview pages of the FC694301 datasheet.

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Full PDF Text Transcription

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This product complies with the RoHS Directive (EU 2002/95/EC). FC694301 Silicon N-channel MOS FET For switching circuits  Overview FC694301 is dual N-channel small signal MOS FET employed small size surface mounting package.  Features  High-speed switching  Low drain-source ON resistance: RDS(on) typ. = 3 W (VGS = 2.
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