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FC6A21060L - Gate Resistor installed Dual N-Channel MOS FET

Features

  • s y Low Source-source On-state Resistance:RSS(on)typ. = 8.7 mΩ（VGS = 4.5 V) y CSP package:smallest & thinnest size y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant).
  • Marking Symbol:31.
  • Packaging FC6A21060L Embossed type (Thermo-compression sealing): 5 000 pcs / reel (standard).
  • Absolute Maximum Ratings　Ta = 25 °C Parameter Source-source Voltage FET1 Gate-source Voltage FET2 Source Current (DC).
  • 1 Source Current (Pulsed).
  • 1,.
  • 2 T.

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Datasheet Details

Part number FC6A21060L
Manufacturer Panasonic
File Size 315.62 KB
Description Gate Resistor installed Dual N-Channel MOS FET
Datasheet download datasheet FC6A21060L Datasheet
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Full PDF Text Transcription

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FC6A21060L Gate Resistor installed Dual N-Channel MOS FET For lithium-ion secondary battery protection circuit FC6A21060L Unit: mm „ Features y Low Source-source On-state Resistance:RSS(on)typ. = 8.7 mΩ（VGS = 4.5 V) y CSP package:smallest & thinnest size y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) „ Marking Symbol:31 „ Packaging FC6A21060L Embossed type (Thermo-compression sealing): 5 000 pcs / reel (standard) „ Absolute Maximum Ratings　Ta = 25 °C Parameter Source-source Voltage FET1 Gate-source Voltage FET2 Source Current (DC) *1 Source Current (Pulsed) *1,*2 Total Power Dissipation *1 Overall Channel Temperature Storage Temperature Range Symbol VSS VGS IS ISp PD Tch Tstg Rating 12 ±12 6 60 0.
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