FG694301 - Silicon N-/P-channel MOSFET

Panasonic

Key Features

s.
Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS =.
4.0 V).
High-speed switching.
Small size surface mounting package: SSMini6-F3-B.
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package.
Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard).
Absolute Maximum Ratings Ta = 25°C Parameter Symbol Drain-source surrender voltag.

FG694301 silicon n-/p-channel mosfet by Panasonic - Datasheet Preview

Datasheet Details

Part number	FG694301
Manufacturer	Panasonic
File Size	620.43 KB
Description	Silicon N-/P-channel MOSFET
Datasheet	FG694301 Datasheet

Other Datasheets by Panasonic

Part Number	Description
FG6943010R	Silicon N-/P-channel MOSFET

Full PDF Text Transcription (Reference)

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This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits  Overview FG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package.  Features  Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS = –4.0 V)  High-speed switching  Small size surface mounting package: SSMini6-F3-B  Contributes to miniaturization of sets, reduction of component count.