Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Unit
Drain to Source Voltage Gate to Source Voltage
VDS VGS
30 ±20
V
Drain Current Drain Current (Pulsed).
1 Total Power Dissipation
ID IDp
100 200
mA
PD 100 mW
Channel Te.
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DReovcisNioon. . T1 T4-EA-14911
FK3F03080L
Silicon N-channel MOSFET
For switching circuits
Product Standards MOS FET
FK3F03080L
Unit : mm
Features y Low drive voltage : 2.5 V drive y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
Marking Symbol :X8
Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25 °C
Parameter
Symbol
Rating
Unit
Drain to Source Voltage Gate to Source Voltage
VDS VGS
30 ±20
V
Drain Current Drain Current (Pulsed) *1 Total Power Dissipation
ID IDp
100 200
mA
PD 100 mW
Channel Temperature Storage Temperature Range
Tch 150 Tstg -55 to +150
°C
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C
1. Gate 2. Source 3.