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FK3F03080L - Silicon N-channel MOSFET

Key Features

  • s y Low drive voltage : 2.5 V drive y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant).
  • Marking Symbol :X8.
  • Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Rating Unit Drain to Source Voltage Gate to Source Voltage VDS VGS 30 ±20 V Drain Current Drain Current (Pulsed).
  • 1 Total Power Dissipation ID IDp 100 200 mA PD 100 mW Channel Te.

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DReovcisNioon. . T1 T4-EA-14911 FK3F03080L Silicon N-channel MOSFET For switching circuits Product Standards MOS FET FK3F03080L Unit : mm „ Features y Low drive voltage : 2.5 V drive y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) „ Marking Symbol :X8 „ Packaging Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard) „ Absolute Maximum Ratings Ta = 25 °C Parameter Symbol Rating Unit Drain to Source Voltage Gate to Source Voltage VDS VGS 30 ±20 V Drain Current Drain Current (Pulsed) *1 Total Power Dissipation ID IDp 100 200 mA PD 100 mW Channel Temperature Storage Temperature Range Tch 150 Tstg -55 to +150 °C Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 °C 1. Gate 2. Source 3.