FK8V03060L
FK8V03060L is Silicon N-channel MOS FET manufactured by Panasonic.
Features
- Low drain-source On-state Resistance
RDS(on) typ. = 22 m (VGS = 4.5 V)
- High-speed switching : Qg = 3.8 n C
- Halogen-free / Ro HS pliant
(EU Ro HS / UL-94 V-0 / MSL:Level 1 pliant)
- Marking Symbol: 3F
- Packaging Embossed type (Thermo-pression sealing) : 3 000 pcs / reel (standard)
- Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Unit
Drain-source Voltage
Gate-source Voltage Drain Current (Steady State)
- 1 Drain Current (t = 10 s)
- 1 Drain Current (Pulsed)
- 1,- 2 Source Current (Pulsed)
(Body Diode)
- 1,- 2 Total Power Dissipation (Steady State)
- 1 Total Power Dissipation (t = 10 s)
- 1
IDp ISp (BD)
20 6.5 8 26
1 1.5
Channel Temperature
Tch 150
C
Operating Ambient Temperature
Topr -40 to + 85
C
Storage Temperature Range
Tstg -55 to...
