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FK8V03060L - Silicon N-channel MOS FET

Features

  • s.
  • Low drain-source On-state Resistance RDS(on) typ. = 22 m (VGS = 4.5 V).
  • High-speed switching : Qg = 3.8 nC.
  • Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant).
  • Marking Symbol: 3F.
  • Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard).
  • Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Drain-source Voltage VDS 33 V Gate-source Voltage Drain Current (Steady State).
  • 1 Drain Current (t.

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Datasheet Details

Part number FK8V03060L
Manufacturer Panasonic
File Size 389.16 KB
Description Silicon N-channel MOS FET
Datasheet download datasheet FK8V03060L Datasheet
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DReovcisNioon. . T2 T4-EA-13170 FK8V03060L Silicon N-channel MOS FET For lithium-ion secondary battery protection circuit For DC-DC Converter  Features  Low drain-source On-state Resistance RDS(on) typ. = 22 m (VGS = 4.5 V)  High-speed switching : Qg = 3.
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