Datasheet4U Logo Datasheet4U.com

MA121 - Silicon epitaxial planar type Switching Diodes

Key Features

  • Three-element contained in one package, allowing high-density mounting.
  • Short reverse recovery time trr.
  • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Peak reverse voltage Forward current (DC).
  • 1 Peak forward current.
  • 1 Non-repetitive peak forward surge current.
  • 1,2 VR VRM IF IFM IFSM 80 80 100 225 500 Junction temperature Storage temperature Note).
  • 1 : Value for single diode.

📥 Download Datasheet

Datasheet Details

Part number MA121
Manufacturer Panasonic
File Size 82.73 KB
Description Silicon epitaxial planar type Switching Diodes
Datasheet download datasheet MA121 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MA12040 Filterless and High-Efficiency +4V to +18V Audio Amplifier Infineon
MA12040P Filterless and High-Efficiency +4V to +18V Audio Amplifier Infineon
MA12070 Filterless and High-Efficiency +4V to +26V Audio Amplifier Infineon
MA12070P Filterless and High-Efficiency +4V to +26V Audio Amplifier Infineon
MA1-B-34-430-1-A162-C Miniature hydraulic/magnetic circuit breakers Carling Technologies

Other Datasheets by Panasonic

Part Number Description
MA122 Silicon epitaxial planar type Switching Diodes
MA124 Switching Diodes
MA126 Silicon epitaxial planar type Switching Diodes
MA127 Silicon epitaxial planar type Switching Diodes
MA128 Silicon epitaxial planar type Switching Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Switching Diodes MA6X121 (MA121) Silicon epitaxial planar type I Features • Three-element contained in one package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage (DC) Peak reverse voltage Forward current (DC)*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 VR VRM IF IFM IFSM 80 80 100 225 500 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s Tj Tstg 150 −55 to +150 Unit V V mA mA mA °C °C 2.90+–00..0250 1.9±0.1 (0.95) (0.95) 456 32 0.30+–00..0150 0.50+–00..0150 10° 1 (0.65) 1.50–+00..0255 2.8–+00..32 5° Unit : mm 0.16+–00..0160 0.4±0.2 1.1–+00..12 1.1–+00..13 0 to 0.