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MA126 - Silicon epitaxial planar type Switching Diodes

Key Features

  • br>.
  • Four isolated elements contained in one package, allowing high- density mounting.
  • High breakdown voltage: VR = 80 V 32 0.30+.
  • 00..0150 0.50+.
  • 00..0150 10˚ 1 Productnnu.
  • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage Maximum peak reverse voltage Forward current.
  • 1 Peak forward current.
  • 1 Non-repetitive peak forward surge current.
  • 1, 2 VR VRM IF IFM IFSM 80 80 100 225 500 Junction temperature Stora.

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Datasheet Details

Part number MA126
Manufacturer Panasonic
File Size 235.96 KB
Description Silicon epitaxial planar type Switching Diodes
Datasheet download datasheet MA126 Datasheet

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MA128 Silicon epitaxial planar type Switching Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA6X126 (MA126) Silicon epitaxial planar type For switching circuit 2.90+–00..0250 1.9±0.1 (0.95) (0.95) 456 Unit: mm 0.16+–00..0160 0.4±0.2 1.50–+00..0255 2.8–+00..32 5˚ Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie 1.1–+00..12stage.dce 1.1–+00..13 (0.65)/ ■ Features • Four isolated elements contained in one package, allowing high- density mounting • High breakdown voltage: VR = 80 V 32 0.30+–00..0150 0.50+–00..