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MA27111 - Switching Diodes

Key Features

  • s.
  • High-density mounting is possible.
  • Short reverse recovery time trr.
  • Small terminal capacitance Ct 0.27+0.05.
  • 0.02 2 1.00±0.05 1.40±0.05 0.13+0.05.
  • 0.02 1 0.60±0.05 0.15 min.
  • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Note).
  • : t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg.

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Switching Diodes MA27111 Silicon epitaxial planar type Unit: mm For high-speed switching circuits ■ Features • High-density mounting is possible • Short reverse recovery time trr • Small terminal capacitance Ct 0.27+0.05 –0.02 2 1.00±0.05 1.40±0.05 0.13+0.05 –0.02 1 0.60±0.05 0.15 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 5° 5° 0 to 0.