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MA2J704 Datasheet Schottky Barrier Diodes (SBD)

Manufacturer: Panasonic

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Datasheet Details

Part number MA2J704
Manufacturer Panasonic
File Size 43.69 KB
Description Schottky Barrier Diodes (SBD)
Datasheet download datasheet MA2J704 Datasheet

Overview

Schottky Barrier Diodes (SBD) MA2J704 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit K A 0.625 0.16 − 0.06 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 20 20 300 200 1 125 −55 to +125 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2S Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 Forward voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr VR = 10 V VR = 20 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 30 3.0 Conditions Min Typ Max 2 5 0.55 Unit µA µA V pF ns Note) 1.

Schottky barrier diode is sensitive to electric shock (static electricity, etc.).

Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.

Key Features

  • 0.3 1 MA2J704 IF  V F 10 Schottky Barrier Diodes (SBD) IR  V R 40 10.
  • 2 Ct  VR 1 Forward current IF (A) 75°C 10.
  • 1 Ta = 125°C 25°C Reverse current IR (A) Ta = 125°C 10.
  • 4 75°C Terminal capacitance Ct (pF) 10.
  • 3 30 20 10.
  • 2 10.
  • 5 10.
  • 3 10.
  • 6 10 25°C 10.
  • 4 10.
  • 7 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 Forward voltage VF (V) Reverse voltage VR (V) Reverse volta.

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