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MA2J729 - Schottky Barrier Diodes (SBD)

Features

  • 0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 200 1 150.
  • 55 to +150 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2B Note).
  • : The peak-to-peak value.

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Datasheet preview – MA2J729

Datasheet Details

Part number MA2J729
Manufacturer Panasonic
File Size 44.27 KB
Description Schottky Barrier Diodes (SBD)
Datasheet download datasheet MA2J729 Datasheet
Additional preview pages of the MA2J729 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA2J729 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification K A 0.625 0.16 − 0.06 + 0.1 • Sealed in the S-mini (2-pin) mold and super small type • Allowing to rectify under (IF(AV) = 200 mA) condition • Allowing high-density mounting 2 1 1.25 ± 0.1 0.5 ± 0.1 I Features 0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 200 1 150 −55 to +150 Unit V V mA mA A °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.
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