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MA3D755 - Schottky Barrier Diode

Features

  • Low forward voltage VF.
  • High dielectric breakdown voltage: > 5 kV.
  • Easy-to-mount, due to its V cut lead end.
  • TO-220D-A1 package I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak reverse-voltage VRRM 60 V Average forward current IF(AV) 5 A Non-repetitive peak forward- IFSM 90 A surge-current.
  • Junction temperature Storage temperature Tj.
  • 40 to +125 °C Tstg.
  • 40 to +125 °C Note).
  • :.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) For switching mode power supply I Features • Low forward voltage VF • High dielectric breakdown voltage: > 5 kV • Easy-to-mount, due to its V cut lead end • TO-220D-A1 package I Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak reverse-voltage VRRM 60 V Average forward current IF(AV) 5 A Non-repetitive peak forward- IFSM 90 A surge-current * Junction temperature Storage temperature Tj −40 to +125 °C Tstg −40 to +125 °C Note) *: Half sine wave; 10 ms/cycle 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 φ 3.2±0.1 15.0±0.5 13.7±0.2 4.2±0.2 Solder Dip 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 2.54±0.30 5.08±0.
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