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MA3D756 - Schottky Barrier Diode

Features

  • 3.2±0.1 15.0±0.5.
  • Low forward voltage VF.
  • High dielectric breakdown voltage: > 5 kV.
  • Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1.
  • Absolute Maximum Ratings TC = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 MaDinistecnoanntincueed.
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Datasheet Details

Part number MA3D756
Manufacturer Panasonic
File Size 213.66 KB
Description Schottky Barrier Diode
Datasheet download datasheet MA3D756 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3D756 (MA7D56) Silicon epitaxial planar type (cathode common) For switching mode power supply 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • High dielectric breakdown voltage: > 5 kV • Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 MaDinistecnoanntincueed ■NNRFsJSFRTNoouuttootheeEoeeornprrvegn))rwwcelreae-etm1t*2rraagiiseotc..
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