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MA3D760 Datasheet Schottky Barrier Diode

Manufacturer: Panasonic

Overview: Schottky Barrier Diodes (SBD) MA3D760 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 15.0 ± 0.5 9.9 ± 0.3 3.0 ± 0.5 4.6 ± 0.2 2.9 ± 0.

Key Features

  • Low forward rise voltage VF.
  • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV.
  • Easy-to-mount, caused by its V cut lead end φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.4 ± 0.2 1.6 ± 0.2 0.8 ± 0.1 2.54 ± 0.3 3 5.08 ± 0.5 2.6 ± 0.1 0.55 ± 0.15 I Absolute Maximum Ratings Ta = 25°C 1 2 Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VRR.

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