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MA3D760 - Schottky Barrier Diode

Features

  • Low forward rise voltage VF.
  • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV.
  • Easy-to-mount, caused by its V cut lead end φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.4 ± 0.2 1.6 ± 0.2 0.8 ± 0.1 2.54 ± 0.3 3 5.08 ± 0.5 2.6 ± 0.1 0.55 ± 0.15 I Absolute Maximum Ratings Ta = 25°C 1 2 Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VRR.

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Datasheet Details

Part number MA3D760
Manufacturer Panasonic
File Size 42.91 KB
Description Schottky Barrier Diode
Datasheet download datasheet MA3D760 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3D760 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 15.0 ± 0.5 9.9 ± 0.3 3.0 ± 0.5 4.6 ± 0.2 2.9 ± 0.2 I Features • Low forward rise voltage VF • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV • Easy-to-mount, caused by its V cut lead end φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 1.4 ± 0.2 1.6 ± 0.2 0.8 ± 0.1 2.54 ± 0.3 3 5.08 ± 0.5 2.6 ± 0.1 0.55 ± 0.
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