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MA3D799 - Schottky Barrier Diode

Features

  • /.
  • Forward current (Average) IF(AV) = 10 A rectification is possible .
  • Cathode-common dual type e ge.
  • Low forward voltage: VF < 0.47 V 15.0±0.5 13.7±0.2 4.2±0.2 Solder Dip nc d ycle sta.
  • Absolute Maximum Ratings TC = 25°C lifec Parameter Symbol Rating Unit a e t Repetitive peak reverse voltage VRRM 30 V uc Forward current (Average) IF(AV) 10 A n u rod Non-repetitive peak forward IFSM 120 A P surge current.
  • te tin ur . Junctiontemperature.

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Datasheet Details

Part number MA3D799
Manufacturer Panasonic
File Size 229.83 KB
Description Schottky Barrier Diode
Datasheet download datasheet MA3D799 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) 3.0±0.5 For switching mode power supply ■ Features / • Forward current (Average) IF(AV) = 10 A rectification is possible . • Cathode-common dual type e ge • Low forward voltage: VF < 0.47 V 15.0±0.5 13.7±0.2 4.2±0.2 Solder Dip nc d ycle sta ■ Absolute Maximum Ratings TC = 25°C lifec Parameter Symbol Rating Unit a e t Repetitive peak reverse voltage VRRM 30 V uc Forward current (Average) IF(AV) 10 A n u rod Non-repetitive peak forward IFSM 120 A P surge current * te tin ur .
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