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MA3J741D - Silicon epitaxial planar type

Features

  • E Unit µA V V pF ns 1.5 1 Detection efficiency 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc. ). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3.
  • : trr measuring instrument Bias.

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Datasheet Details

Part number MA3J741D
Manufacturer Panasonic
File Size 46.97 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3J741D Datasheet
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Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.
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