MA3J741E - Silicon epitaxial planar type

Panasonic

Key Features

E Unit µA V V pF ns 1.5 1 Detection efficiency 65 % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc. ). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3.
: trr measuring instrument Bias.

MA3J741E silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3J741E
Manufacturer	Panasonic
File Size	46.97 KB
Description	Silicon epitaxial planar type
Datasheet	MA3J741E Datasheet

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Part Number	Description
MA3J741	Silicon epitaxial planar type
MA3J741D	Silicon epitaxial planar type
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Full PDF Text Transcription (Reference)

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Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.9 ± 0.