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MA3S132A - Silicon epitaxial planar type Switching Diodes

Features

  • 1 3 2 0.28 ± 0.05 1 MA3S132A IF  V F 103 105 Ta = 150°C 102 104 Switching Diodes IR  V R 1.6 1.4 VF  Ta Forward current IF (mA) Reverse current IR (nA) Forward voltage VF (V) 1.2 1.0 IF = 100 mA 0.8 0.6 0.4 0.2 10 103 100°C 1 Ta = 150°C 100°C 25°C.
  • 20°C 102 25°C 10 10 mA 3 mA 10.
  • 1 10.
  • 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0 20 40 60 80 100 120 0.
  • 40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient t.

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Datasheet Details

Part number MA3S132A
Manufacturer Panasonic
File Size 47.44 KB
Description Silicon epitaxial planar type Switching Diodes
Datasheet download datasheet MA3S132A Datasheet

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Full PDF Text Transcription

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Switching Diodes MA3S132A Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 1.60 − 0.03 0.80 0.80 0.51 0.51 1.60 ± 0.1 0.80 0.80 ± 0.05 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 0.60 − 0.03 0.44 0.44 + 0.05 0.88 − 0.
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