Click to expand full text
Switching Diodes
MA3S132D
Silicon epitaxial planar type
0.28 ± 0.05
For switching circuits I Features
• Short reverse recovery time trr • Small terminal capacitance, Ct • Super-small SS-mini type package contained two elements, allowing high-density mounting
1.60 − 0.03 0.80 0.80 0.51 0.51
0.80
1.60 ± 0.1 0.80 ± 0.05
Unit : mm
1
+ 0.05
3
2
0.28 ± 0.05
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 150 225 340 500 750 150 −55 to +150
Unit V V mA
0.60 − 0.03
0.44
0.44
+ 0.