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MA3S132D - Silicon epitaxial planar type

Features

  • Short reverse recovery time trr.
  • Small terminal capacitance, Ct.
  • Super-small SS-mini type package contained two elements, allowing high-density mounting 1.60.
  • 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 Unit : mm 1 + 0.05 3 2 0.28 ± 0.05 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Note).
  • : t = 1 s Sing.

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Datasheet Details

Part number MA3S132D
Manufacturer Panasonic
File Size 47.76 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3S132D Datasheet
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Full PDF Text Transcription

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Switching Diodes MA3S132D Silicon epitaxial planar type 0.28 ± 0.05 For switching circuits I Features • Short reverse recovery time trr • Small terminal capacitance, Ct • Super-small SS-mini type package contained two elements, allowing high-density mounting 1.60 − 0.03 0.80 0.80 0.51 0.51 0.80 1.60 ± 0.1 0.80 ± 0.05 Unit : mm 1 + 0.05 3 2 0.28 ± 0.05 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 150 225 340 500 750 150 −55 to +150 Unit V V mA 0.60 − 0.03 0.44 0.44 + 0.
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