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MA3U755 - Silicon epitaxial planar type (cathode common)

Features

  • Small U-type package and allowing surface mounting.
  • Low forward rise voltage VF.
  • Cathode common dual type 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 2.3 ± 0.1 0.5 ± 0.1 7.3 ± 0.1 1.8 ± 0.1 2.5 ± 0.1 0.8 max. 0.93 ± 0.1 1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Ra.

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Datasheet Details

Part number MA3U755
Manufacturer Panasonic
File Size 39.84 KB
Description Silicon epitaxial planar type (cathode common)
Datasheet download datasheet MA3U755 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3U755 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply I Features • Small U-type package and allowing surface mounting • Low forward rise voltage VF • Cathode common dual type 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 2.3 ± 0.1 0.5 ± 0.1 7.3 ± 0.1 1.8 ± 0.1 2.5 ± 0.1 0.8 max. 0.93 ± 0.1 1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 60 5 40 −40 to +125 −40 to +125 Unit V A 1 0.75 ± 0.1 2.3 ± 0.1 4.6 ± 0.
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