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MA3U760 - Silicon epitaxial planar type (cathode common)

Features

  • 2.5 ± 0.1 0.93 ± 0.1 1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1 0.75 ± 0.1 2.3 ± 0.1 4.6 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 90 5 40.
  • 40 to +125.
  • 40 to +125 Unit V 1 2 3 A A °C °C 1 : Anode 2 : Cathode (Common) 3 : Anode U-Type Package Note).
  • : Half sine-wave: 10 ms/cycle I Elect.

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Datasheet Details

Part number MA3U760
Manufacturer Panasonic
File Size 39.99 KB
Description Silicon epitaxial planar type (cathode common)
Datasheet download datasheet MA3U760 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3U760 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 1.8 ± 0.1 6.5 ± 0.1 5.3 ± 0.1 4.35 ± 0.1 2.3 ± 0.1 0.5 ± 0.1 0.8 max. • Small U-type package and surface mounting • High breakdown voltage VR • Low forward rise voltage VF • Cathode common dual type 7.3 ± 0.1 I Features 2.5 ± 0.1 0.93 ± 0.1 1.0 ± 0.1 0.1 ± 0.05 0.5 ± 0.1 0.75 ± 0.1 2.3 ± 0.1 4.6 ± 0.
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