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MA3X551 - Silicon epitaxial planar type

Features

  • Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature VRM IF PD Topr Tstg 45 100 150.
  • 25 to +85.
  • 55 to +150 V mA mW °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: MY Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance.
  • Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f.

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Datasheet Details

Part number MA3X551
Manufacturer Panasonic
File Size 40.62 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3X551 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PIN Diodes MA3X551 Silicon epitaxial planar type Unit : mm For UHF and SHF bands AGC 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 0.95 1.9 ± 0.2 2.9 − 0.05 + 0.2 1 3 2 0.95 1.
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