MA3Z792D - Silicon epitaxial planar type

Panasonic

Key Features

Two MA3Z792s diodes (anode common) are contained in the Smini type 3-pin package.
Allowing to rectify under (IF(AV) = 100 mA) condition.
Optimum for high-frequency rectification because of its short reverse recovery time (trr).
Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak revers.

MA3Z792D silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3Z792D
Manufacturer	Panasonic
File Size	45.18 KB
Description	Silicon epitaxial planar type
Datasheet	MA3Z792D Datasheet

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MA3Z792	Silicon epitaxial planar type
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Schottky Barrier Diodes (SBD) MA3Z792D Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3Z792s diodes (anode common) are contained in the Smini type 3-pin package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.