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MA3Z793 - Silicon epitaxial planar type

Key Features

  • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package.
  • Allowing to rectify under (IF(AV) = 100 mA) condition.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak r.

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Datasheet Details

Part number MA3Z793
Manufacturer Panasonic
File Size 45.58 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3Z793 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3Z793 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.