MA4X159A - Silicon epitaxial planar type Switching Diodes
Panasonic
Key Features
1
MA4X159A
IF V F
103 102
Switching Diodes
IR V R
1.2
VF Ta
102
10
Forward current IF (mA)
Ta = 125°C
1.0
IF = 100 mA
Reverse current IR (µA)
Forward voltage VF (V)
0.8 10 mA 3 mA 0.4 1 mA 0.1 mA 0.2
10
1
75°C
0.6
1
Ta = 125°C 75°C 25°C.
20°C
10.
1 25°C
10.
1
10.
2
10.
2
0
0.2
0.4
0.6
0.8
1.0
1.2
10.
3
0
20
40
60
80
100
120
0.
40
0
40
80
120
160
Forward voltage VF (V)
Reverse voltage VR (V).
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Switching Diodes
MA4X159A
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.65 ± 0.15
2.8 − 0.3
+ 0.2
1.5 − 0.05
+ 0.25
0.65 ± 0.15
0.5 R
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Symbol VR VRRM IF(AV) IF(AV) IFRM IFRM IFSM IFSM Tj Tstg Rating 80 80 100 75 225 170 500 375 150 −55 to +150 Unit V V mA mA/Unit mA mA/Unit mA mA/Unit °C °C
1.1 − 0.1
0.4 ± 0.
MA4X159A Datasheet
