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MA4X159A - Silicon epitaxial planar type Switching Diodes

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Features

  • 1 MA4X159A IF  V F 103 102 Switching Diodes IR  V R 1.2 VF  Ta 102 10 Forward current IF (mA) Ta = 125°C 1.0 IF = 100 mA Reverse current IR (µA) Forward voltage VF (V) 0.8 10 mA 3 mA 0.4 1 mA 0.1 mA 0.2 10 1 75°C 0.6 1 Ta = 125°C 75°C 25°C.
  • 20°C 10.
  • 1 25°C 10.
  • 1 10.
  • 2 10.
  • 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10.
  • 3 0 20 40 60 80 100 120 0.
  • 40 0 40 80 120 160 Forward voltage VF (V) Reverse voltage VR (V).

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Datasheet Details

Part number MA4X159A
Manufacturer Panasonic
File Size 49.72 KB
Description Silicon epitaxial planar type Switching Diodes
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Switching Diodes MA4X159A Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 0.5 R I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Symbol VR VRRM IF(AV) IF(AV) IFRM IFRM IFSM IFSM Tj Tstg Rating 80 80 100 75 225 170 500 375 150 −55 to +150 Unit V V mA mA/Unit mA mA/Unit mA mA/Unit °C °C 1.1 − 0.1 0.4 ± 0.
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