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MA4X194 - Silicon epitaxial planar type

Key Features

  • 1 MA4X194 IF  V F 103 102 Switching Diodes IR VR 1.2 VF  Ta 102 10 1.0 Forward current IF (mA) Reverse current IR (µA) 100°C 10 25°C.
  • 20°C 1 Forward voltage VF (V) Ta = 150°C Ta = 150°C 100°C 25°C IF = 100 mA 0.8 1 0.6 10 mA 10.
  • 1 0.4 3 mA 10.
  • 1 10.
  • 2 0.2 10.
  • 2 0 0.2 0.4 0.6 0.8 1.0 1.2 10.
  • 3 0 10 20 30 40 50 0.
  • 40 0 40 80 120 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature.

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Datasheet Details

Part number MA4X194
Manufacturer Panasonic
File Size 48.47 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA4X194 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA4X194 Silicon epitaxial planar type Unit : mm For switching circuits 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 1.1 − 0.1 + 0.2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Power dissipation Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double VR VRRM IF(AV) IF(AV) IFRM IFRM IFSM IFSM PD Tj Tstg 40 40 100 75 225 170 500 375 150 150 −55 to +150 V V mA mA/Unit mA mA/Unit mA mA/Unit mW °C °C 0.4 ± 0.