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MA4X714 - Silicon epitaxial planar type

Datasheet Summary

Features

  • 0.5 R 4 1 + 0.1 3 0.4.
  • 0.05 2 0.2 1.1.
  • 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double.
  • Single Double.
  • Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125.
  • 55 to +125 °C °C mA Unit V mA 0.4 ± 0.2 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1P Internal Connection 4 3 1 2 Junction temperature Storage temperature Note).

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Datasheet Details

Part number MA4X714
Manufacturer Panasonic
File Size 46.92 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA4X714 Datasheet
Additional preview pages of the MA4X714 datasheet.

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Schottky Barrier Diodes (SBD) MA4X714 Silicon epitaxial planar type Unit : mm For switching circuits For wave detection circuit • Two MA3X704As are contained in one package (Two diodes in a different direction) • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.9 − 0.05 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 0.65 ± 0.15 1.9 ± 0.2 0.95 + 0.2 0.95 0.5 I Features 0.5 R 4 1 + 0.1 3 0.4 − 0.05 2 0.2 1.1 − 0.1 + 0.2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V mA 0.4 ± 0.
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